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Advanced Physical Etching and Deposition Simulator Elite ™ is an advanced 2D topography simulator for modeling physical etching, deposition, reflow and CMP planarization processes for modern semiconductor technologies. Within the framework, Elite provides seamless bi-directional integration with and process simulators and contains an additional Simulator, which provides several Monte Carlo based atomistic etching and deposition models.

The combination of SSuprem 4 and Elite can be used to optimize a Super Junction formation process, which is very popular in power device electronics. One of the methods of manufacturing of pillar-like p-n junctions consists of etching several deep trenches in n-type substrate with subsequent deposition/anneal or epitaxial growth of p-type silicon.

This figure shows Elite simulation of the Deep Trench Etching using RIE and CVD deposition of p-type material. Ssuprem4 is used to simulate the non-planar epitaxial growth with impurity redistribution and p-n junction formation. Stress Dependent Etch Rate Model.